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GaobeidianSIP Micro-Assembly
Product Description
SIP assembly capability
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Equipment |
Characteristics |
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Hydrogen removal furnace |
① Operating temperature: 200–600°C; ② Temperature uniformity: ±5℃; |
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Eutectic Sintering Furnace |
① Maximum operating temperature: 450°C; ② Temperature uniformity: ±5℃; ③ Temperature control accuracy: ±1℃; ④ Ultimate vacuum level: 5 Pa; ⑤ Process gas: nitrogen or formic acid. |
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Automatic dispensing pick-and-place machine |
① Chip size: 0.3–25 mm; ②Repeatability in the X and Y directions: ≤±0.001 mm @ 3°; ③ Angular control accuracy: ≤±0.5°; ④ Mounting warpage control: ≤0.5°; ⑤ Overall pick-and-place accuracy: ≤±0.015 mm @ 30 CPH (standard mode). |
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Plasma cleaning |
① Output power: 0–600 W; ② Discharge vacuum level: 20–50 Pa. |
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Fully automatic gold wire ball bonding machine |
① Welding positioning accuracy: ≤±3 μm @ 3°; ② Applicable wire diameter: 15–50 μm; ③ Minimum solder joint diameter: ≥65 μm (based on a 25-μm wire diameter); ④ Minimum lead arc height: ≤65 μm (based on a 25-μm wire diameter). |
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Multi-functional wedge wire bonding machine |
① Bond wire diameters: aluminum wires (18–100 μm), gold wires (15–75 μm), gold ribbons (12.7 × 50 μm to 25.4 × 300 μm), and wires made of specific alloys; ② Cavity depth range: maximum 21 mm; ③ Bonding head Z travel: 19 mm; ④ Bonding head X–Y travel range: 15 mm in the X direction, 15 mm in the Y direction. |
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Parallel seam welder |
① Compatible with tube-and-shell dimensions: (4–200) × (4–200) mm; ② Adaptable to tube-and-shell shapes: rectangular, circular; ③ Adapted cover plate thickness: (0.1–0.15) mm. |